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基于边界元法的二维VLSI版图电容提取

EXTRACTION OF 2D CAPACITANCE FOR VLSI LAYOUT BASED ON BOUNDARY ELEMENT METHOD

  • 摘要: 文章中提出了一种用边界元法计算VLIS版图电容的方法,它通过求解二维Laplace方程,直接得到包括寄生电容在内的版图电容的值.与其它计算电容的数值方法相比,该方法数据准备简单,占有内存少,计算效率高,并且有较高的精度.通过用本算法对几种典型结构的VLSI版图电容进行提取,均取得令人满意的效果.

     

    Abstract: This paper presents a two dimensional (2D) extraction of VLSI capacitance based on the boundary element method. By solving 2D Laplace equation, various kinds of capacitance including parasitic capacitance are obtained. Compared with other numerical methods, the extractor can not only prepare the input data easily, but also has high efficiency and precision. Through applying the extractor to several examples of VLSI layout, the calculated results show good coincidence with the experimental data.

     

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