65nm工艺节点下的光刻掩模版优化算法
An Optimization Strategy for 65 nm Node Photomasks
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摘要: 在模拟退火算法中引入了准梯度的概念,改进了以模拟退火算法为基础的光刻掩模版优化算法.该算法优先搜索由准梯度确定的关键区域,减少了模拟退火算法的无效搜索次数,在保证优化效果的基础上,可以提高原算法的收敛效率.实验结果表明,在65nm CMOS工艺节点下,该算法使得收敛速度大幅提高,优化效果更好.Abstract: We introduced a quasi-gradient concept in simulated annealing(SA) algorithm to improve the optimization process for photomask generation.The proposed approach decreases the number of null searches in SA algorithm by firstly searching in the critical-zone indicated by the 'quasi-gradient',and is more efficient than the old method,with yet higher quality.Experimental results show that this algorithm is of good accuracy and fast speed.
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