局部K参数模拟方法的稳定性证明
The Proof of the Stability of Circuit Simulation Based on the K Method
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摘要: 采用文献(魏洪川,喻文健,杨柳,等.基于K参数思想的快速三维互连电感电阻提取算法.电子学报,2005,33(8):1365-1369)中提出的算法选取窗口,证明基于此方法提取的部分磁阻矩阵K正定,进而证明基于该矩阵的模拟稳定.Abstract: The window selection method proposed in （Wei Hongchuan,Yu Wenjian,Yang Liu,et al. Fast inductance and resistance extraction of 3-D VLSI interconnects based on the method of K element.Acta Electronica Sinica,2005,33（8）：1365－1369） was used in the paper.We proved based on it,the partial reluctance matrix extracted is positive definite.So the simulation based on it is stable.
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