高级检索

深亚微米CMOS运算放大器的综合

Synthesis of Deep-Submicron CMOS Operational Amplifier

  • 摘要: 利用一种计算电路直流工作点的技术,并采用基于BSIM3v3 MOS模型的MOS管评估器来提高基于公式法进行电路综合的精度;同时提出一种综合策略,使得综合后得出的运算放大器在工艺波动和工作条件(如电源电压和温度)变化时,仍能满足性能要求.大量的实验结果表明:文中方法可以快速综合出可制造的深亚微米CMOS运算放大器.

     

    Abstract: A new way to calculate the operating point of the circuit is proposed and an encapsulated device evaluator based on BSIM3v3MOS model is integrated,to improve the accuracy of equation-based synthesis approach.At the same time,a new strategy is presented to synthesize operational amplifier quickly,to meet all the specifications and is immune to all variation,including operating/manufacturing variation.It has been demonstrated that this approach can synthesize manufacturable deep-submicron CMOS operational amplifier in very short run time.

     

/

返回文章
返回